![]() ![]() The current gain value of PN2222 and 2N4401 is almost the same, but the MPS650 had a lower value. In the electrical specification comparison of PN2222 vs 2N4401 vs MPS650, the voltage and current specs of each of the transistors are the same. In the table, we listed the PN2222 vs 2N4401 vs MPS650, the comparison of each transistor electrical specification. The electrical specifications of each transistor are the same, these devices have been used for almost the same applications. If you need the datasheet in pdf please click this link PN2222 transistor equivalent ![]() The junction temperature of -55 to 150â, this is the most common temperature value for a higher power transistor device. The transition frequency is 300MHz, this is the switching frequency of this device. The current gain of the PN2222 transistor is 35 to 300hFE, the gain value is important at amplifier and voltage regulator devices. The power dissipation of the PN2222 transistor is 625mW, the power dissipation of the PN2222 transistor. The collector current is 600mA, it is the maximum load capacity of the PN2222 transistor. The collector to emitter saturation voltage is 1v, it is the voltage used to turn ON the collector to emitter junction. The voltage terminal specs such as collector to the base are 60V, collector to emitter is 30v, and emitter to base voltage is 5v, the transistor terminal voltage specs show that PN2222 is a general-purpose transistor type. In this section, we explain the specification description and application explanation of the PN2222 transistor. PN2222 transistor specification and application description The TO-92 package is made with a mixture of epoxy and plastic, it is the most compact transistor package, so the circuit made with these transistors is small and compact. The PN2222 component had the transistor package TO-92, the TO-92 is a general-purpose package. The collector is the output of the transistor The base is used to trigger the transistor I still write "2N3904" on schematics, even when I'm clearly specifying SMTs in the BOM.The emitter is the input of the transistor. Alas, I've never taken to the MMBT and etc. Note that, as JEDEC parts specify everything that they list in the data there is, strictly speaking, no such thing as a "2N2222 in plastic package" the metal TO-18 can is as much a core part of the standard as the fact that it's NPN! Of course, you'll never see "SMT 2N7000" (it's TO-92.) requested, because 2N7002 exists (SOT-23). PNxxx wouldn't seem compatible with the pattern, so that may very well be the creation of one company's, which spread by imitation to others. AFAIK, those were all kept by JEDEC or whatever. (some familiar optoisolators got placed in the 4N and 6N ranges, for similar reasons, and so on). I think the first digit was supposed to be about active electrodes (but that would seem to be broken by the 2E26 having about five inside.), so 1N = diode, 2N = triode (i.e., BJT, FET), 3N = tetrode (dual gate / back gate MOSFET), etc. So "N" comes out to mean "semiconductor device", or something like that. ECC81, ECF80, Eċ 4.), but I believe that's what it's cut from. I don't remember what all the definitions are (it's seemingly not nearly as consistent as the European definitions, which called out heater, tube type(s) and identifier, e.g. Digit-letter-number codes have been around since The War or so. ![]()
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